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Magazine Name : Ieee Transactions On Electron Devices

Year : 2005 Volume number : 52 Issue: 03

Multiple Submission And Prior Publication (Article)
Subject: Editorial
Author: D. P Verret     
page:      297 - 298
Modeling And Analysis Of Znse-Ge Hbts (Article)
Subject: Compound Semiconductor Devices
Author: I M Abdel-Motaleb     
page:      299 - 304
Hydrogen Sensitivity Of Inp Hemts With Wsin-Based Gate Stack (Article)
Subject: Compound Semiconductor Devices
Author: Sander Mertens     
page:      305 - 310
Velocity Overshoot Effects And Scaling Issues In Iii-V Nitrides (Article)
Subject: Compound Semiconductor Devices
Author: M Singh     
page:      311 - 316
Sige Hbts On Bonded Soi Incorporating Buried Silicide Layers (Article)
Subject: Materials Processing And Packaging
Author: M Bain     
page:      317 - 324
Effects Of The Parasitics On The Time Response Of Rce-Pds (Article)
Subject: Optoelectronics, Displays And Imaging
Author: Y M El-Batawy     
page:      325 - 334
Analysis And Circuit Modeling Of Waveguide-Separated Absorption Charge Multiplication-Avalanche Photodetector (Wg-Sacm-Apd) (Article)
Subject: Optoelectronics, Displays And Imaging
Author: Y M El-Batawy     
page:      335 - 344
Binary Addressing Technique With Duty Cycle Control For Lcds (Article)
Subject: Optoelectronics, Displays And Imaging
Author: T N Ruckmongathan     
page:      345 - 351
Process And Reliability Of Air-Gap Cu Interconnect Using 90-Nm Node Technology (Article)
Subject: Reliability
Author: Junji Noguchi     
page:      352 - 359
Structural Optimization Of Sutbdg Devices For Low-Power Applications (Article)
Subject: Silicon Devices
Author: Shiying Xiong     
page:      360 - 366
(110)-Surface Strained-Soi Cmos Devices (Article)
Subject: Silicon Devices
Author: T Mizuno     
page:      367 - 374
Direct Parameter Extraction Of Sige Hbts For The Vbic Bipolar Compact Model (Article)
Subject: Silicon Devices
Author: K Lee     
page:      375 - 384
An Analytical Programming Model For The Drain-Coupling Source-Side Injection Split Gate Flash Eeprom (Article)
Subject: Silicon Devices
Author: H. Y Wang     
page:      385 - 391
Simulation Of Single-Electron Transport In Nanostructured Quantum Dots (Article)
Subject: Silicon Devices
Author: S Babiker     
page:      392 - 396
Asymmetric Halo Cmosfet To Reduce Static Power Dissipation With Improved Performance (Article)
Subject: Silicon Devices
Author: A Bansal     
page:      397 - 405
Detailed Investigation Of Geometrical Factor For Pseudo-Mos Transistor Technique (Article)
Subject: Silicon Devices
Author: Kazuhito Komiya     
page:      406 - 412
Effect Of Doped Substrate On Gaas-Aigaas Interfacial Workfunction Ir Detector Response Through Cavity Effect (Article)
Subject: Solid-State Sensors And Actuators
Author: S G Matsik     
page:      413 - 418
Silicon-Based Micro-Fourier Spectrometer (Article)
Subject: Solid-State Sensors And Actuators
Author: D. Knipp     
page:      419 - 426