Your search returned 18 records. Click on the hyperlinks to view further details of Titles..
Magazine Name : Ieee Transactions On Electron Devices
Year : 2005Volume number : 52Issue:03
Multiple Submission And Prior Publication(Article) Subject:
Editorial
Author:
D. P
Verret
page:
297
-
298
Modeling And Analysis Of Znse-Ge Hbts(Article) Subject:
Compound Semiconductor Devices
Author:
I M
Abdel-Motaleb
page:
299
-
304
Hydrogen Sensitivity Of Inp Hemts With Wsin-Based Gate Stack(Article) Subject:
Compound Semiconductor Devices
Author:
Sander
Mertens
page:
305
-
310
Velocity Overshoot Effects And Scaling Issues In Iii-V Nitrides(Article) Subject:
Compound Semiconductor Devices
Author:
M
Singh
page:
311
-
316
Sige Hbts On Bonded Soi Incorporating Buried Silicide Layers(Article) Subject:
Materials Processing And Packaging
Author:
M
Bain
page:
317
-
324
Effects Of The Parasitics On The Time Response Of Rce-Pds(Article) Subject:
Optoelectronics, Displays And Imaging
Author:
Y M
El-Batawy
page:
325
-
334
Analysis And Circuit Modeling Of Waveguide-Separated Absorption Charge Multiplication-Avalanche Photodetector (Wg-Sacm-Apd)(Article) Subject:
Optoelectronics, Displays And Imaging
Author:
Y M
El-Batawy
page:
335
-
344
Binary Addressing Technique With Duty Cycle Control For Lcds(Article) Subject:
Optoelectronics, Displays And Imaging
Author:
T N
Ruckmongathan
page:
345
-
351
Process And Reliability Of Air-Gap Cu Interconnect Using 90-Nm Node Technology(Article) Subject:
Reliability
Author:
Junji
Noguchi
page:
352
-
359
Structural Optimization Of Sutbdg Devices For Low-Power Applications(Article) Subject:
Silicon Devices
Author:
Shiying
Xiong
page:
360
-
366
(110)-Surface Strained-Soi Cmos Devices(Article) Subject:
Silicon Devices
Author:
T
Mizuno
page:
367
-
374
Direct Parameter Extraction Of Sige Hbts For The Vbic Bipolar Compact Model(Article) Subject:
Silicon Devices
Author:
K
Lee
page:
375
-
384
An Analytical Programming Model For The Drain-Coupling Source-Side Injection Split Gate Flash Eeprom(Article) Subject:
Silicon Devices
Author:
H. Y
Wang
page:
385
-
391
Simulation Of Single-Electron Transport In Nanostructured Quantum Dots(Article) Subject:
Silicon Devices
Author:
S
Babiker
page:
392
-
396
Asymmetric Halo Cmosfet To Reduce Static Power Dissipation With Improved Performance(Article) Subject:
Silicon Devices
Author:
A
Bansal
page:
397
-
405
Detailed Investigation Of Geometrical Factor For Pseudo-Mos Transistor Technique(Article) Subject:
Silicon Devices
Author:
Kazuhito
Komiya
page:
406
-
412
Effect Of Doped Substrate On Gaas-Aigaas Interfacial Workfunction Ir Detector Response Through Cavity Effect(Article) Subject:
Solid-State Sensors And Actuators
Author:
S G
Matsik
page:
413
-
418
Silicon-Based Micro-Fourier Spectrometer(Article) Subject:
Solid-State Sensors And Actuators
Author:
D.
Knipp
page:
419
-
426